STEP STRUCTURE OF VICINAL GE(001) SURFACES - COMMENT

被引:12
|
作者
SATO, T
SUEYOSHI, T
AMAKUSA, T
IWATSUKI, M
TOCHIHARA, H
机构
[1] HOKKAIDO UNIV,CATALYSIS RES CTR,KITA KU,SAPPORO,HOKKAIDO 060,JAPAN
[2] JEOL LTD,AKISHIMA,TOKYO 196,JAPAN
关键词
GERMANIUM; SCANNING TUNNELING MICROSCOPY; STEPPED SINGLE CRYSTAL SURFACES; SURFACE STRUCTURE;
D O I
10.1016/0039-6028(95)00712-1
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
We have investigated detailed structures of monatomic steps on Ge(001) at room temperature by using high-resolution scanning tunneling microscopy. Our conclusions are different from those of Kersten et al. [Surf. Sci. 322 (1995) 1] for the same system. The most crucial difference is that we have not observed the nonbonded SE step. We have pointed out a possible reason for the different conclusions.
引用
收藏
页码:328 / 332
页数:5
相关论文
共 50 条
  • [11] REVERSAL OF STEP ROUGHNESS ON GE-COVERED VICINAL SI(001)
    WU, F
    CHEN, X
    ZHANG, ZY
    LAGALLY, MG
    PHYSICAL REVIEW LETTERS, 1995, 74 (04) : 574 - 577
  • [12] Pair interaction between Ge islands on vicinal Si(001) surfaces
    Persichetti, L.
    Sgarlata, A.
    Fanfoni, M.
    Balzarotti, A.
    PHYSICAL REVIEW B, 2010, 81 (11):
  • [13] NATURE OF THE STEP-HEIGHT TRANSITION ON VICINAL SI(001) SURFACES
    PEHLKE, E
    TERSOFF, J
    PHYSICAL REVIEW LETTERS, 1991, 67 (04) : 465 - 468
  • [14] Reconstructions and step structures on vicinal Si(001) surfaces by interaction with Bi
    Lee, YJ
    Lee, SY
    Kim, S
    JOURNAL OF PHYSICS-CONDENSED MATTER, 1999, 11 (08) : 1953 - 1960
  • [15] Step-step interaction on vicinal Si(001) surfaces studied by scanning tunneling microscopy
    Persichetti, L.
    Sgarlata, A.
    Fanfoni, M.
    Bernardi, M.
    Balzarotti, A.
    PHYSICAL REVIEW B, 2009, 80 (07)
  • [16] Multiatomic step formation on GaAs(001) vicinal surfaces during thermal treatment
    Ohkuri, K
    Ishizaki, J
    Hara, S
    Fukui, T
    JOURNAL OF CRYSTAL GROWTH, 1996, 160 (3-4) : 235 - 240
  • [17] Step structures and energies on monahydride-terminated vicinal Si(001) surfaces
    Laracuente, A
    Whitman, LJ
    SURFACE SCIENCE, 2001, 476 (03) : L247 - L253
  • [18] First-principles study of the step oxidation at vicinal Si(001) surfaces
    Yu, BD
    Park, K
    Kim, H
    Chung, CH
    Yeom, HW
    Lyo, IW
    Kong, KJ
    Miyamoto, Y
    Sugino, O
    Ohno, T
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2006, 45 (3B): : 2144 - 2147
  • [19] First-principles study of the step oxidation at vicinal Si(001) surfaces
    Yu, Byung Deok
    Park, Kyoungwan
    Kim, Hanchul
    Chung, Chun-Hyung
    Yeom, Han Woong
    Lyo, In-Whan
    Kong, Ki-Jeong
    Miyamoto, Yoshiyuki
    Sugino, Osamu
    Ohno, Takahisa
    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 2006, 45 (3 B): : 2144 - 2147
  • [20] DC heating-induced step instability on Si(001) vicinal surfaces
    Physics Department, Tokyo Inst. Technol., Oh-okayama, M., Tokyo, Japan
    Surf Sci, 2 (L1006-L1012):