TRANSITION FROM ANTIFERROMAGNETIC KONDO METAL TO MIXED-VALENCE SEMICONDUCTOR IN CE(PT1-XNIX)SN

被引：23
|
作者：
SAKURAI, J
KAWAMURA, R
TANIGUCHI, T
NISHIGORI, S
IKEDA, S
GOSHIMA, H
SUZUKI, T
FUJITA, T
机构：
[1] Faculty of Science, Hiroshima University, Hiroshima
来源：
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS | 1992年 / 104卷 / pt 2期
关键词：
D O I：
10.1016/0304-8853(92)90644-4
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Lattice constant, electrical resistivity, thermopower, magnetic susceptibility and specific heat were measured on the pseudobinary solid solution Ce(Pt1-xNix)Sn to study how the transition takes place from an antiferromagnetic Kondo metal in CePtSn to a mixed valence semiconductor state in CeNiSn.
引用
收藏
页码：1415 / 1417
页数：3
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