ISOTOPIC EFFECT IN ION-INDUCED REEMISSION OF HYDROGEN IMPLANTED INTO GRAPHITE

被引:0
|
作者
HASEBE, Y
SONOBE, M
MORITA, K
机构
[1] Department of Crystalline Materials Science, School of Engineering, Nagoya University, Chikusa-ku, Nagoya, 464-01, Furo-cho
关键词
GRAPHITE; HYDROGEN; HELIUM IONS; BOMBARDMENT; MEV RANGE 1-10; ION-INDUCED REEMISSION; RECYCLING; RETENTION; THERMAL REEMISSION; TRAPPING; ION-INDUCED DETRAPPING; LOCAL MOLECULAR RECOMBINATION; ISOTOPIC EFFECTS;
D O I
10.1080/18811248.1992.9731605
中图分类号
TL [原子能技术]; O571 [原子核物理学];
学科分类号
0827 ; 082701 ;
摘要
The re-emission of H and D atoms, implanted into graphite, induced by 1.5 MeV He+ bombardment has been studied by means of the elastic recoil detection (ERD) technique by changing the initial peak concentration of H and D, the temperature and the He+ ion flux. The experimental re-emission profiles were analyzed solving analytically the mass balance equations. The whole re-emission profiles are shown to be excellently reproduced in terms of the ion-induced detrapping (sigma(d)), trapping (or retrapping) (SIGMA(T)) and local molecular recombination (K) between an activated (free) hydrogen atom and a trapped one and that the effective detrapping cross sections sigma(d)K/SIGMA(T) for H and D are determined as the best fitting parameter to be 2.9 x 10(-18) and 7.7 x 10(-19) cm2, respectively. It is also shown from the experimental data on little dependence of the re-emission profile on the He+ ion flux that the local molecular recombination plays a major role in the ion-induced re-emission. Furthermore, the difference between the effective detrapping cross sections for H and D is reasonably explained in terms of isotopic difference in the values of K for H and D.
引用
收藏
页码:859 / 865
页数:7
相关论文
共 50 条
  • [31] DATA COMPILATION FOR DEPTH DISTRIBUTION OF ION-INDUCED DAMAGE AND ION-IMPLANTED ATOMS
    TERASAWA, M
    NAKAHIGASHI, S
    OZAWA, K
    JOURNAL OF NUCLEAR MATERIALS, 1984, 128 (DEC) : 1001 - 1005
  • [32] CAPTURE, REEMISSION AND THERMODESORPTION OF ION-IMPLANTED DEUTERIUM IN TUNGSTEN
    VARAVA, AV
    ZHDANOV, SK
    PISAREV, AA
    IZVESTIYA AKADEMII NAUK SSSR SERIYA FIZICHESKAYA, 1992, 56 (06): : 166 - 172
  • [33] Effects of the deep ion-induced modification of highly oriented pyrolytic graphite
    Andrianova N.N.
    Borisov A.M.
    Virgiliev Y.S.
    Mashkova E.S.
    Sevostyanova V.S.
    Bulletin of the Russian Academy of Sciences: Physics, 2014, 78 (6) : 520 - 525
  • [34] Angular and temperature dependences of ion-induced electron emission of polycrystalline graphite
    Borisov, AM
    Mashkova, ES
    Nemov, AS
    VACUUM, 2004, 73 (01) : 65 - 72
  • [35] DIFFERENCE BETWEEN AUXIN-INDUCED AND HYDROGEN ION-INDUCED GROWTH
    PERLEY, JE
    PENNY, D
    PENNY, P
    PLANT SCIENCE LETTERS, 1975, 4 (02): : 133 - 136
  • [36] Ion-induced electron emission and sputtering regularities of graphite under nitrogen ion irradiation
    Borisov, A.M.
    Kulikauskas, V.S.
    Mashkova, E.S.
    Eckstein, W.
    2002, Nauka
  • [37] THE EFFECT OF ION-INDUCED DAMAGE ON IBIC IMAGES
    BREESE, MBH
    GRIME, GW
    DELLITH, M
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1993, 77 (1-4): : 332 - 338
  • [38] EFFECT OF SURFACE OXYGEN ON REEMISSION OF DEUTERIUM IMPLANTED IN NICKEL
    TANABE, T
    TAKEO, M
    IMOTO, S
    JOURNAL OF NUCLEAR MATERIALS, 1991, 185 (03) : 286 - 291
  • [39] Re-emission of hydrogen implanted into graphite by helium ion bombardment
    Tsuchiya, B
    Morita, K
    Yamamoto, S
    Nagata, S
    Ohtsu, N
    Shikama, T
    Naramoto, H
    JOURNAL OF NUCLEAR MATERIALS, 2003, 313 : 274 - 278
  • [40] Re-emission of hydrogen implanted into graphite by helium ion bombardment
    Tsuchiya, B. (tsuchiya@imr.tohoku.ac.jp), 1600, (Elsevier): : 313 - 316