DEEP TRAP STATES IN SI3N4 LAYER ON SI SUBSTRATE

被引：24
|
作者：
FUJITA, S
NISHIHARA, M
HOI, WL
SASAKI, A
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1981年 / 20卷 / 05期
关键词：
D O I：
10.1143/JJAP.20.917
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
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页码：917 / 923
页数：7
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