HYPER-ABRUPT EPITAXIAL TUNING DIODES

被引：7
|
作者：
JACKSON, DM
DEMASSA, TA
机构：
[1] MOTOROLA INC,DIV SEMICONDUCTOR PROD,PHOENIX,AZ 85036
[2] ARIZONA STATE UNIV,TEMPE,AZ 85281
来源：
SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 06期
关键词：
D O I：
10.1016/S0038-1101(77)81004-6
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：485 / 490
页数：6
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