HYPER-ABRUPT EPITAXIAL TUNING DIODES

被引：7

作者：

JACKSON, DM

DEMASSA, TA

机构：

[1] MOTOROLA INC,DIV SEMICONDUCTOR PROD,PHOENIX,AZ 85036

[2] ARIZONA STATE UNIV,TEMPE,AZ 85281

来源：

SOLID-STATE ELECTRONICS | 1977年 / 20卷 / 06期

关键词：

D O I：

10.1016/S0038-1101(77)81004-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：485 / 490

页数：6

共 50 条

[1] CAPACITANCE OF A HYPER-ABRUPT TUNING VARACTOR DIODE
SOUKUP, RJ
IEEE TRANSACTIONS ON ELECTRON DEVICES, 1976, 23 (03) : 361 - 363
[2] GERMANIUM HYPER-ABRUPT VARACTOR
TERADA, T
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1966, 49 (02): : 3 - &
[3] AVALANCHE BREAKDOWN OF HYPER-ABRUPT JUNCTION
SHINODA, M
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1969, 52 (04): : 151 - &
[4] BREAKDOWN VOLTAGE OF GERMANIUM HYPER-ABRUPT JUNCTION
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SHIMIZU, A
ISHIDA, T
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1969, 52 (09): : 167 - +
[5] PASSIVATED MESA TYPE HYPER-ABRUPT JUNCTION DIODE
NAKAMURA, T
OHTA, M
NEC RESEARCH & DEVELOPMENT, 1969, (13): : 59 - +
[6] A capacitance reliability degradation mechanism in hyper-abrupt junction varactors
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Rassel, R.
Johnson, J. B.
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[7] DEPENDENCE OF ZENER BREAKDOWN VOLTAGE ON IMPURITY DISTRIBUTION IN HYPER-ABRUPT JUNCTION
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[8] REVERSE CHARACTERISTICS OF GERMANIUM HYPER-ABRUPT P-N JUNCTION
TERADA, T
ELECTRONICS & COMMUNICATIONS IN JAPAN, 1969, 52 (01): : 103 - &
[9] AVALANCHE BREAKDOWN VOLTAGE OF HYPER-ABRUPT SILICON P-N-JUNCTIONS
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TYAGI, MS
SOLID-STATE ELECTRONICS, 1976, 19 (04) : 342 - 344
[10] METHOD FOR FABRICATING EXPONENTIALLY RETROGRADED SILICON HYPER-ABRUPT VARACTORS AND STUDY OF THEIR CHARACTERISTICS
TYAGI, MS
GUPTA, AK
INDIAN JOURNAL OF PURE & APPLIED PHYSICS, 1977, 15 (03) : 152 - 156

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