A FULLY DIFFERENTIAL CMOS TRANSCONDUCTANCE TRANSIMPEDANCE WIDE-BAND AMPLIFIER

被引：1
|
作者：
WANG, CK [1 ]
HUANG, PC [1 ]
HUANG, CY [1 ]
机构：
[1] IND TECHNOL RES INST,COMP & COMMUN LABS,HSINCHU,TAIWAN
来源：
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-ANALOG AND DIGITAL SIGNAL PROCESSING | 1995年 / 42卷 / 11期
关键词：
Number:; -; Acronym:; ITRI; Sponsor: Industrial Technology Research Institute; IEEE; Sponsor: IEEE Foundation; Sponsor: Department of Electrical Engineering; Chulalongkorn University;
D O I：
10.1109/82.475257
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
A high-speed wideband amplifier using a transconductance-transimpedance circuit technique is presented. The proposed circuit configuration results in more reliable performances than are typically obtained from designs using conventional pole-zero cancellation or peaking technique. With a 0.8 mu m, double poly, double metal, n-well CMOS technology and single 5-V power supply, the prelayout simulation of this amplifier shows a -3 dB frequency of 300MHz with a voltage gain of 14 dB when the loading capacitance is 1.5 pF.
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页码：745 / 748
页数：4
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