SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY OF SI/SIGE(001) SUPERLATTICES

被引：19
|
作者：
YU, ET [1 ]
HALBOUT, JM [1 ]
POWELL, AR [1 ]
IYER, SS [1 ]
机构：
[1] IBM CORP,DIV RES,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
APPLIED PHYSICS LETTERS | 1992年 / 61卷 / 26期
关键词：
D O I：
10.1063/1.107947
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Cross-sectional scanning tunneling microscopy and spectroscopy were used to study a modulation-doped Si/Si0.76Ge0.24(001) superlattice. Contrast between the Si and Si0.76Ge0.24 layers has been observed in topographic images. Features such as band-edge discontinuities and band bending arising from doping have been detected in spectroscopic measurements at a series of points across the superlattice structure.
引用
收藏
页码：3166 / 3168
页数：3
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