COMBINED REACTION AND DIFFUSION-CONTROLLED KINETICS OF SILICIDATION

被引：1
|
作者：
BORISENKO, VE [1 ]
IVANENKO, LI [1 ]
KRUSHEVSKI, EA [1 ]
机构：
[1] BELARUSIAN STATE POLYTECH ACAD, MINSK 220027, BELARUS
来源：
THIN SOLID FILMS | 1994年 / 250卷 / 1-2期
关键词：
D O I：
10.1016/0040-6090(94)90164-3
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A model of combined reaction and diffusion controlled silicidation in thin film structures is presented. The analytical equation for silicide layer thickness as a function of the thermal processing regime has been obtained. illustrative calculations for thin film chromium silicides formed by rapid thermal processing were performed within the proposed model and the traditional diffusion limited kinetics. Comparison of the results with the experimental data shows the proposed reaction-diffusion model to be much more accurate, particularly at the early stage of the growth.
引用
收藏
页码：53 / 55
页数：3
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