IMPEDANCE ANALYSIS OF SI/SIO2 STRUCTURES GRAFTED WITH BIOMOLECULES FOR THE ELABORATION OF AN IMMUNOSENSOR

被引：14
|
作者：
SCHYBERG, C
PLOSSU, C
BARBIER, D
JAFFREZICRENAULT, N
MARTELET, C
MAUPAS, H
SOUTEYRAND, E
CHARLES, MH
DELAIR, T
MANDRAND, B
机构：
[1] ECOLE CENT LYON, PHYSICOCHIM INTERFACES LAB, CNRS, URA 404, F-69131 ECULLY, FRANCE
[2] ECOLE NORMALE SUPER LYON, CNRS, UNITE MIXTE BIOMERIEUX, F-69364 LYON, FRANCE
来源：
SENSORS AND ACTUATORS B-CHEMICAL | 1995年 / 27卷 / 1-3期
关键词：
IMMUNOSENSORS; IMPEDANCE ANALYSIS;
D O I：
10.1016/0925-4005(94)01639-Y
中图分类号：
O65 [分析化学];
学科分类号：
070302 ; 081704 ;
摘要：
Impedance measurements on Si/SiO2 structures grafted with biomolecules have been compared by using an electrochemical cell and a mercury probe. A grafting of octadecyldimethyl(dimethylamino) silane has been performed on thin (80 Angstrom) thermal oxides, yielding dense and well-structured monolayers of molecules. Their thicknesses have been derived from capacitance measurements and compared with the known length of the molecule. The results seem to indicate that an electrolytical contact is more appropriate than the contact of the mercury probe. The impedance measurements with the mercury probe have, however, permitted to establish the basis of an electrical model of the membrane of an impedimetric immunosensor based on an Si/SiO2 structure.
引用
收藏
页码：457 / 460
页数：4
相关论文
共 50 条
  • [41] Electroforming of Si/SiO2/W Structures with an Exposed Nanometer-Thick SiO2 Layer
    Mordvintsev V.M.
    Kudryavtsev S.E.
    Russian Microelectronics, 2001, 30 (5) : 303 - 311
  • [42] Electroforming of Si/SiO2/W structures with an exposed nanometer-thick SiO2 layer
    Mordvintsev, V.M.
    Kudryavtsev, S.E.
    2001, Nauka Moscow (30):
  • [43] Evidence of C migration in the SiO2 to the SiO2/Si interface of C-implanted structures
    Ribas, E.
    Maltez, R. L.
    THIN SOLID FILMS, 2021, 730
  • [44] Nitric acid oxidation of Si (NAOS) method for low temperature fabrication of SiO2/Si and SiO2/SiC structures
    Kobayashi, H.
    Imamura, K.
    Kim, W. -B.
    Im, S. -S.
    Asuha
    APPLIED SURFACE SCIENCE, 2010, 256 (19) : 5744 - 5756
  • [45] In situ electrical monitoring of SiO2/Si structures in low-temperature plasma using impedance spectroscopy
    Morozumi, Junki
    Goya, Takahiro
    Kuyama, Tomohiro
    Eriguchi, Koji
    Urabe, Keiichiro
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2023, 62 (SI)
  • [46] Si emission from the SiO2/Si interface during the growth of SiO2 in the HfO2/SiO2/Si structure
    Ming, Z
    Nakajima, K
    Suzuki, M
    Kimura, K
    Uematsu, M
    Torii, K
    Kamiyama, S
    Nara, Y
    Yamada, K
    APPLIED PHYSICS LETTERS, 2006, 88 (15)
  • [47] Using surface charge analysis to characterize the radiation response of Si/SiO2 structures
    Stacey, JW
    Schrimpf, RD
    Fleetwood, DM
    Holmes, KC
    IEEE TRANSACTIONS ON NUCLEAR SCIENCE, 2004, 51 (06) : 3686 - 3691
  • [48] Role of the SiO2 buffer layer thickness in the formation of Si/SiO2/nc-Ge/SiO2 structures by dry oxidation
    Kling, A.
    Ortiz, M. I.
    Prieto, A. C.
    Rodriguez, A.
    Rodriguez, T.
    Jimenez, J.
    Ballesteros, C.
    Soares, J. C.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2006, 249 (1-2 SPEC. ISS.): : 306 - 309
  • [49] Role of hydrogen in the action of fluorine in Si/SiO2 structures
    Journal of Non-Crystalline Solids, 1995, 187
  • [50] Electroluminescence in MOS structures with Si/SiO2 nanometric multilayers
    Gaburro, Z
    Pucker, G
    Bellutti, P
    Pavesi, L
    SOLID STATE COMMUNICATIONS, 2000, 114 (01) : 33 - 37
12345