ABSORPTION EDGE OF GESE2

被引:0
|
作者
GAVALESHKO, NP
KURIK, MV
SAVCHUK, AI
机构
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1968年 / 1卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:920 / +
页数:1
相关论文
共 50 条
  • [1] SUBLIMATION OF GESE AND GESE2
    ZLOMANOV, VP
    NOVOZHILOV, AF
    MAKAROV, AV
    INORGANIC MATERIALS, 1980, 16 (04) : 419 - 423
  • [2] PHOTOBLEACHING IN GeSe2 AND SiO2/GeSe2 THIN FILMS
    Sun, Y. J.
    Gao, J.
    Zhang, C. Y.
    CHALCOGENIDE LETTERS, 2020, 17 (10): : 515 - 520
  • [3] ASSIMILATION OF GESE2 MONOCRYSTALS
    BENSOUSSAN, M
    BRENAC, A
    TRONC, P
    THOMAS, J
    JOURNAL OF CRYSTAL GROWTH, 1972, 15 (01) : 79 - +
  • [4] GESE2 REFLECTION SPECTRA
    ZAMANOVA, RM
    MAMEDOV, SS
    NURIYEVA, ZD
    IZVESTIYA AKADEMII NAUK AZERBAIDZHANSKOI SSR SERIYA FIZIKO-TEKHNICHESKIKH I MATEMATICHESKIKH NAUK, 1981, (02): : 58 - 61
  • [5] DEVELOPMENT KINETICS OF GESE2
    MARCUS, M
    HANLEY, T
    WAGNER, A
    JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (03) : C97 - C97
  • [6] CRYSTAL-GROWTH BY VAPOR TRANSPORT OF GESE, GESE2, GESE2, AND GETE AND TRANSPORT MECHANISM AND MORPHOLOGY OF GETE
    WIEDEMEI.H
    CHAUDHUR.AK
    IRENE, EA
    JOURNAL OF CRYSTAL GROWTH, 1971, 13 (MAY) : 393 - &
  • [7] DISORDER IN GESE2 SMALL CRYSTALS AND MEDIUM-RANGE STRUCTURE IN AMORPHOUS GESE2
    MATSUDA, O
    INOUE, K
    NAKANE, T
    MURASE, K
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1992, 150 (1-3) : 202 - 206
  • [8] Relaxation process of band-edge exciton in layered crystalline GeSe2
    Nakaoka, T
    Wang, Y
    Matsuda, O
    Inoue, K
    Murase, K
    JOURNAL OF LUMINESCENCE, 2000, 87-9 : 617 - 619
  • [9] SYSTEMS OF TL2SE-GESE2 AND TLSE-GESE(GESE2)
    BABANLY, MB
    KULIEVA, NA
    ZHURNAL NEORGANICHESKOI KHIMII, 1983, 28 (06): : 1557 - 1562
  • [10] NEW CRYSTAL FORM OF GESE2
    BURGEAT, J
    LEROUX, G
    BRENAC, A
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 1975, 8 (APR1) : 325 - 327