DRIFT-AIDING FRINGING FIELDS IN CHARGE-COUPLED DEVICES

被引:44
|
作者
CARNES, JE
KOSONOCKY, WF
RAMBERG, EG
机构
关键词
D O I
10.1109/JSSC.1971.1050194
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
引用
收藏
页码:322 / +
页数:1
相关论文
共 50 条
  • [1] FRINGING FIELDS AND INTERFACE STATES EFFECTS OF INCOMPLETE CHARGE TRANSFER IN CHARGE-COUPLED DEVICES.
    Barsan, R.M.
    1600, (21):
  • [2] CHARGE-COUPLED DEVICES
    SCHMIDT, J
    ELECTRONICS, 1971, 44 (08): : 8 - &
  • [3] INFLUENCE OF DESIGN PARAMETERS ON FRINGING FIELDS IN CHARGE-COUPLED-DEVICES
    IONESCU, MA
    BARSAN, RM
    REVUE ROUMAINE DE PHYSIQUE, 1976, 21 (09): : 929 - 937
  • [4] Inertia effects in the presence of self-induced charge drift in charge-coupled devices
    Bogoslovskiy, A.V.
    Miroshnichenko, S.I.
    Soviet journal of communications technology & electronics, 1988, 33 (12): : 173 - 176
  • [5] CHARGE TRANSFER IN CHARGE-COUPLED DEVICES
    KIM, CK
    LENZLINGER, M
    JOURNAL OF APPLIED PHYSICS, 1971, 42 (09) : 3586 - +
  • [6] CHARGE-COUPLED DEVICES.
    Mavor, John
    Engineering (London), 1978, 218 (01):
  • [7] IMPROVING CHARGE-COUPLED DEVICES
    不详
    NATURE, 1973, 245 (5419) : 14 - 14
  • [8] Charge-Coupled Devices with Compensated Charge Transfer
    Arutyunov V.A.
    Sorokin O.V.
    Russian Microelectronics, 2000, 29 (2) : 104 - 105
  • [9] Charge transfer modeling for charge-coupled devices
    Lavine, JP
    Stevens, EG
    Banghart, EK
    Trabka, EA
    Burkey, BC
    Schneider, DJ
    SEMICONDUCTOR PROCESS AND DEVICE PERFORMANCE MODELLING, 1998, 490 : 251 - 256
  • [10] Radiation damage in charge-coupled devices
    Bassler, Niels
    RADIATION AND ENVIRONMENTAL BIOPHYSICS, 2010, 49 (03) : 373 - 378