SPECTROSCOPIC ELLIPSOMETRY OF STRAINED SI1-XGEX LAYERS

被引：2

作者：

LIBEZNY, M ^{[1
]}

POORTMANS, J ^{[1
]}

CAYMAX, M ^{[1
]}

VANAMMEL, A ^{[1
]}

KUBENA, J ^{[1
]}

HOLY, V ^{[1
]}

VANHELLEMONT, J ^{[1
]}

机构：

[1] MASARYK UNIV, DEPT SOLID STATE PHYS, CS-61137 BRNO, CZECHOSLOVAKIA

来源：

THIN SOLID FILMS | 1993年 / 233卷 / 1-2期

关键词：

D O I：

10.1016/0040-6090(93)90080-9

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Spectroscopic ellipsometry was used for the determination of optical parameters and thicknesses of Si-capped Si1-xGex layers with x = 0. 10, 0. 16 and 0.20, grown by ultrahigh vacuum chemical vapour deposition. The parameters of the E1 critical point were determined together with the thicknesses of the surface natural oxide, the Si cap and the Si1-xGex layers. The results were correlated with cross-section transmission electron microscopy, X-ray diffraction and reflectance measurements and compared with available data from literature.

引用

页码：158 / 161

页数：4

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