SI/SIGE MODULATION-DOPED STRUCTURES GROWN BY GAS-SOURCE MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
MATSUMURA, A
PRASAD, RS
THORNTON, TJ
FERNANDEZ, JM
XIE, MH
ZHANG, X
ZHANG, J
JOYCE, BA
机构：
[1] UNIV LONDON IMPERIAL COLL SCI TECHNOL & MED,INTERDISCIPLINARY RES CTR SEMICOND MAT,LONDON SW7,ENGLAND
[2] NIPPON STEEL CORP LTD,ELECTR RES LABS,SAGAMIHARA,KANAGAWA 229,JAPAN
来源：
COMPOUND SEMICONDUCTORS 1994 | 1995年 / 141期
关键词：
D O I：
暂无
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
We have grown Si/SiGe modulation doped quantum wells by gas source molecular beam epitaxy using arsenic as an n-type dopant. The layers are characterised by TEM and SIMS analysis, and magnetotransport measurements. The SIMS analysis shows an arsenic concentration in excess of 10(19) cm(-3) along with strong surface segregation. Pronounced Shubnikov-de Haas oscillations were observed in the magnetotransport measurements. Mobilities in the two dimensional electron gas were determined to be around 15,000 cm(2)/Vs.
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页码：319 / 322
页数：4
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