LIGHT SCATTERING FROM SPIN-DENSITY FLUCTUATIONS IN N-TYPE PBTE

被引:0
|
作者
JHA, S
机构
来源
关键词
D O I
暂无
中图分类号
O4 [物理学];
学科分类号
0702 ;
摘要
引用
收藏
页码:27 / &
相关论文
共 50 条
  • [41] Linear magnetoresistance in n-type silicon due to doping density fluctuations
    Nicholas A. Porter
    Christopher H. Marrows
    Scientific Reports, 2
  • [42] Inelastic light-scattering from spin-density excitations in the regime of the persistent spin helix in a GaAs-AlGaAs quantum well
    Schoenhuber, C.
    Walser, M. P.
    Salis, G.
    Reichl, C.
    Wegscheider, W.
    Korn, T.
    Schueller, C.
    PHYSICAL REVIEW B, 2014, 89 (08):
  • [43] LORENZ NUMBER OF N-TYPE PBTE AND OF PBTE-PBSE SOLID SOLUTIONS
    RAVICH, YI
    SMIRNOV, IA
    TIKHONOV, VV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1967, 1 (02): : 163 - &
  • [44] Optimum Carrier Concentration in n-Type PbTe Thermoelectrics
    Pei, Yanzhong
    Gibbs, Zachary M.
    Gloskovskii, Andrei
    Balke, Benjamin
    Zeier, Wolfgang G.
    Snyder, G. Jeffrey
    ADVANCED ENERGY MATERIALS, 2014, 4 (13)
  • [45] THERMOELECTRIC PROPERTIES OF N-TYPE PBTE AT HIGH TEMPERATURES
    STAVITSK.TS
    LONG, VA
    EFIMOVA, BA
    SOVIET PHYSICS SOLID STATE,USSR, 1966, 7 (08): : 2062 - +
  • [46] Transport and thermoelectric performance of n-type PbTe films
    Dzundza, B.
    Nykyruy, L.
    Parashchuk, T.
    Ivakin, E.
    Yavorsky, Y.
    Chernyak, L.
    Dashevsky, Z.
    PHYSICA B-CONDENSED MATTER, 2020, 588
  • [47] INVESTIGATION OF FARADAY-EFFECT IN N-TYPE PBTE
    VEIS, AN
    GOLUBEVA, VI
    UKHANOV, YI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (01): : 121 - 121
  • [48] DYNAMICAL ELECTRICAL-CONDUCTIVITY OF N-TYPE PBTE
    KATAYAMA, S
    MILLS, DL
    SIRKO, R
    PHYSICAL REVIEW B, 1983, 28 (10): : 6079 - 6082
  • [49] INVESTIGATION OF THE FARADAY EFFECT IN n-TYPE PbTe.
    Veis, A.N.
    Golubeva, V.I.
    Ukhanov, Yu.I.
    1600, (09):
  • [50] Design, synthesis and characterization of graded n-type PbTe
    Gelbstein, Y
    Dashevsky, Z
    Dariel, MP
    XXI INTERNATIONAL CONFERENCE ON THERMOELECTRICS, PROCEEDINGS ICT '02, 2002, : 9 - 12