SILICON-NICKEL SILICIDE HETEROSTRUCTURES GROWN BY MOLECULAR-BEAM EPITAXY

被引：0
|
作者：
BEAN, JC [1 ]
POATE, JM [1 ]
CHIU, KCR [1 ]
机构：
[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1980年 / 27卷 / 11期
关键词：
D O I：
10.1109/T-ED.1980.20212
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2190 / 2190
页数：1
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