2-PEAK PHOTOLUMINESCENCE AND LIGHT-EMITTING MECHANISM OF POROUS SILICON

被引：27
|
作者：
ZHANG, SL
HUANG, FM
HO, KS
JIA, L
YANG, CL
LI, JJ
ZHU, T
CHEN, Y
CAI, SM
FUJISHIMA, A
LIU, ZF
机构：
[1] BEIJING UNIV,DEPT PHYS,BEIJING 100871,PEOPLES R CHINA
[2] BEIJING UNIV,COLL CHEM & MOLECULE ENGN,BEIJING 100871,PEOPLES R CHINA
[3] FUDAN UNIV,SURFACE PHYS LAB,SHANGHAI 200433,PEOPLES R CHINA
[4] UNIV TOKYO,DEPT SYNTHET CHEM,TOKYO 113,JAPAN
来源：
PHYSICAL REVIEW B | 1995年 / 51卷 / 16期
关键词：
D O I：
10.1103/PhysRevB.51.11194
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
A two-peak photoluminescence (PL) spectrum of p - type porous silicon (PS) has been observed in atmospheric stored samples. According to different spectral characteristics, especially linewidth, and different effects induced by storage and illumination of samples, the low- and high-energy peaks are identified as due to emission caused by quantum confinement effects of remnant Si walls of PS and siloxene and/or SiO2 on PS surfaces, respectively. A light-emitting mechanism accounting for the two-peak PL spectrum is discussed. © 1995 The American Physical Society.
引用
收藏
页码：11194 / 11197
页数：4
相关论文
共 50 条
  • [31] MAGNETIC-PROPERTIES OF LIGHT-EMITTING POROUS SILICON
    LAIHO, R
    LAHDERANTA, E
    VLASENKO, L
    VLASENKO, M
    AFANASIEV, M
    JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 197 - 200
  • [32] IDENTITY OF THE LIGHT-EMITTING STATES IN POROUS SILICON WIRES
    YEH, CY
    ZHANG, SB
    ZUNGER, A
    APPLIED PHYSICS LETTERS, 1993, 63 (25) : 3455 - 3457
  • [33] IMPROVEMENT OF ELECTROLUMINESCENCE PROPERTIES OF LIGHT-EMITTING POROUS SILICON
    ZHANG, FL
    HAO, PH
    SHI, G
    HOU, XY
    HUANG, DM
    WANG, X
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1993, 8 (11) : 2015 - 2017
  • [34] IMPROVED PHOTOLUMINESCENCE FROM LIGHT-EMITTING SILICON MATERIAL BY SURFACE MODIFICATION
    KIM, DI
    LEE, CW
    BULLETIN OF THE KOREAN CHEMICAL SOCIETY, 1995, 16 (11) : 1019 - 1023
  • [35] URBACH EDGES IN LIGHT-EMITTING POROUS SILICON AND RELATED MATERIALS
    BUSTARRET, E
    LIGEON, M
    MIHALCESCU, I
    OSWALD, J
    THIN SOLID FILMS, 1995, 255 (1-2) : 234 - 237
  • [36] Nonlinear electrical functions of porous silicon light-emitting diodes
    Ueno, K
    Ozaki, T
    Koyama, H
    Koshida, N
    ADVANCES IN MICROCRYSTALLINE AND NANOCRYSTALLINE SEMICONDUCTORS - 1996, 1997, 452 : 699 - 704
  • [37] Lewis acid stabilizes surface of light-emitting porous silicon
    不详
    MRS BULLETIN, 1998, 23 (04) : 4 - 4
  • [38] Efficiency of avalanche light-emitting diodes based on porous silicon
    S. K. Lazarouk
    A. A. Leshok
    V. A. Labunov
    V. E. Borisenko
    Semiconductors, 2005, 39 : 136 - 138
  • [39] ELECTRON-BOMBARDMENT EFFECTS ON LIGHT-EMITTING POROUS SILICON
    CALLIARI, L
    ANDERLE, M
    CESCHINI, M
    PAVESI, L
    MARIOTTO, G
    BISI, O
    JOURNAL OF LUMINESCENCE, 1993, 57 (1-6) : 83 - 87
  • [40] Study on electroluminescence from porous silicon light-emitting diode
    杨亚军
    李清山
    刘宪云
    Chinese Optics Letters, 2006, (05) : 297 - 298
12345