1.3-MU-M WAVE-GUIDED ELECTROABSORPTION MODULATORS WITH STRAIN-COMPENSATED INASP/INGAP MQW STRUCTURES

被引：10
|
作者：
WAKITA, K
KOTAKA, I
AMANO, T
SUGIURA, H
机构：
[1] NTT Opto-electronics Laboratories, Atsugi-Shi, Kanaguwa Pref., 243-01
来源：
ELECTRONICS LETTERS | 1995年 / 31卷 / 16期
关键词：
ELECTROABSORPTION MODULATORS; SEMICONDUCTOR QUANTUM WELLS;
D O I：
10.1049/el:19950949
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
High-quality multiquantum well (MQW) structures with 1.5% compressive strain in InAsP wells and 0.8% tensile strain in InGaP barriers have been grown by gas-source molecular beam epitaxy on InP substrates. High-speed (3 dB bandwidth over 10 GHz) and low driving voltage (lower than 2 V for 20 dB on/off ratio) operation using these structures is demonstrated. These characteristics are the first reported for MQW modulators operating at 1.3 mu m.
引用
收藏
页码：1339 / 1341
页数：3
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