DIELECTRIC-RELAXATION ASSOCIATED WITH DEEP LEVELS IN HIGH-RESISTIVITY SEMICONDUCTORS

被引：0

|

作者：

MITROKHIN, VI

REMBEZA, SI

SVIRIDOV, VV

YAROSLAVTSEV, NP

机构：

来源：

SOVIET PHYSICS SEMICONDUCTORS-USSR | 1986年 / 20卷 / 12期

关键词：

D O I：

暂无

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

引用

收藏

页码：1394 / 1395

页数：2

相关论文

共 50 条

[41] DEEP-LEVEL SPECTROSCOPY IN HIGH-RESISTIVITY MATERIALS
HURTES, C
BOULOU, M
MITONNEAU, A
BOIS, D
APPLIED PHYSICS LETTERS, 1978, 32 (12) : 821 - 823
[42] AUTOMATED-SYSTEM FOR THE CHARACTERIZATION OF HIGH-RESISTIVITY SEMICONDUCTORS BY THE VANDERPAUW METHOD
FORBES, L
TILLINGHAST, J
HUGHES, B
LI, C
REVIEW OF SCIENTIFIC INSTRUMENTS, 1981, 52 (07): : 1047 - 1050
[43] LATE STAGE IN ELECTRIC-FIELD SCREENING IN HIGH-RESISTIVITY SEMICONDUCTORS
ILINSKII, AV
MELNIKOV, MB
FIZIKA TVERDOGO TELA, 1991, 33 (11): : 3427 - 3430
[44] SINGLE ELECTROMETER METHOD OF MEASURING TRANSPORT PROPERTIES OF HIGH-RESISTIVITY SEMICONDUCTORS
BALESHTA, TM
KEYS, JD
AMERICAN JOURNAL OF PHYSICS, 1968, 36 (01) : 23 - &
[45] ACOUSTIC WAVE DRIFT WAVE INTERACTION IN HIGH-RESISTIVITY PIEZOELECTRIC SEMICONDUCTORS
SHAPIRO, B
SPECTOR, HN
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 29 (02): : K155 - K158
[46] INVESTIGATION OF ABSOLUTE QUANTUM YIELD OF INTERNAL PHOTOEFFECT IN HIGH-RESISTIVITY SEMICONDUCTORS
GRENISHIN, SG
CHERKASO.YA
SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (09): : 2249 - +
[47] METHOD FOR COMPREHENSIVE DETERMINATION OF PARAMETERS OF TRAPS IN HIGH-RESISTIVITY SEMICONDUCTORS AND DIELECTRICS
BORDOVSKII, GA
BOITSOV, VG
DEMIDOV, BA
SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 8 (10): : 1243 - 1245
[48] A DEEP-LEVEL TRANSIENT-CONDUCTANCE SPECTROMETER FOR HIGH-RESISTIVITY SEMICONDUCTORS USING A MARGINAL OSCILLATOR DETECTOR
ALEXIEV, D
BUTCHER, KSA
TANSLEY, TL
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1992, 31 (6A): : 1909 - 1914
[49] CONTRIBUTION TO DETERMINATION OF DEEP TRAPPING LEVELS IN HIGH-RESISTIVITY FILMS OF N-TYPE CDTE
LHERMITTE, C
CARLES, D
VAUTIER, C
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02): : 273 - 276
[50] DIELECTRIC-RELAXATION AND DELAYED-COLLECTION FIELD EXPERIMENTS IN AMORPHOUS-SEMICONDUCTORS
KASTNER, MA
SOLID STATE COMMUNICATIONS, 1983, 45 (02) : 191 - 194

← 1 2 3 4 5 →