ALL-OPTICAL MODULATION AT 1.3-MU-M WAVELENGTH IN THE INGAASP/INP SYSTEM

被引：0
|
作者：
KOWALSKY, W
机构：
来源：
APPLIED PHYSICS B-PHOTOPHYSICS AND LASER CHEMISTRY | 1988年 / 46卷 / 01期
关键词：
D O I：
10.1007/BF00698651
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：27 / 33
页数：7
相关论文
共 50 条
  • [31] 1.3-MU-M INGAASP CONTINUOUS-WAVE LASERS VAPOR GROWN ON (311) AND (511) INP SUBSTRATES
    OLSEN, GH
    ZAMEROWSKI, TJ
    DIGIUSEPPE, NJ
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (06) : 3598 - 3599
  • [32] COMBINED HIGH-POWER AND HIGH-FREQUENCY OPERATION OF INGAASP INP LASERS AT 1.3-MU-M
    CHEN, TR
    ZHUANG, YH
    YARIV, A
    BLAUVELT, H
    BARCHAIM, N
    ELECTRONICS LETTERS, 1990, 26 (14) : 985 - 987
  • [33] VAPOR-PHASE GROWTH OF 1.3-MU-M INGAASP-INP HETEROJUNCTION LASERS, LEDS, AND APDS
    OLSEN, GH
    ETTENBERG, M
    NUESE, CJ
    KRESSEL, H
    BOTEZ, D
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 1979, 26 (11) : 1843 - 1843
  • [34] OPTIMUM DESIGNS FOR INGAASP/INP (LAMBDA=1.3-MU-M) PLANOCONVEX WAVEGUIDE LASERS UNDER LASING CONDITIONS
    UENO, M
    LANG, R
    MATSUMOTO, S
    KAWANO, H
    FURUSE, T
    SAKUMA, I
    IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (06): : 218 - 228
  • [35] DETERMINATION OF TEMPERATURE-DEPENDENT CARRIER LOSSES IN 1.3-MU-M INGAASP/INP DOUBLE-HETEROSTRUCTURES
    RHEINLANDER, B
    HEILMANN, R
    OELGART, G
    PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1988, 106 (01): : K113 - K116
  • [36] MODULATION CHARACTERISTICS OF INGAASP-INP LEDS AT 1.5 MU-M WAVELENGTH
    MACHIDA, S
    NAGAI, H
    KIMURA, T
    ELECTRONICS LETTERS, 1979, 15 (06) : 175 - 177
  • [37] 8-GBIT/S GAAS-ON-INP 1.3-MU-M WAVELENGTH OEIC TRANSMITTER
    CALLIGER, O
    CLEI, A
    ROBEIN, D
    AZOULAY, R
    PIERRE, B
    BIBLEMONT, S
    KAZMIERSKI, C
    IEE PROCEEDINGS-OPTOELECTRONICS, 1995, 142 (01): : 13 - 16
  • [38] AGING TESTS OF LOW THRESHOLD CURRENT INGAASP/INP V-GROOVED SUBSTRATE BURIED HETEROSTRUCTURE LASERS EMITTING AT 1.3-MU-M WAVELENGTH
    IMAI, H
    ISHIKAWA, H
    HORI, K
    TAKAHEI, K
    APPLIED PHYSICS LETTERS, 1982, 41 (07) : 583 - 584
  • [39] ASSESSMENT OF SINGLE-CRYSTAL P-TOLUENE SULFONATE AS AN ALL-OPTICAL SWITCHING MATERIAL AT 1.3-MU-M
    KIM, DY
    LAWRENCE, BL
    TORRUELLAS, WE
    STEGEMAN, GI
    BAKER, G
    METH, J
    APPLIED PHYSICS LETTERS, 1994, 65 (14) : 1742 - 1744
  • [40] OPTICAL TRAPPING OF SMALL PARTICLES USING A 1.3-MU-M COMPACT INGAASP DIODE-LASER
    SATO, S
    OHYUMI, M
    SHIBATA, H
    INABA, H
    OGAWA, Y
    OPTICS LETTERS, 1991, 16 (05) : 282 - 284
12345