METAL GAAS INTERFACE CHEMICAL AND ELECTRONIC-PROPERTIES - GAAS ORIENTATION DEPENDENCE

被引：12
|
作者：
CHANG, S
BRILLSON, LJ
RIOUX, DF
KIME, YJ
KIRCHNER, PD
PETTIT, GD
WOODALL, JM
机构：
[1] UNIV WISCONSIN,DEPT PHYS,MADISON,WI 53706
[2] SYRACUSE UNIV,DEPT PHYS,SYRACUSE,NY 13210
[3] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
来源：
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 1990年 / 8卷 / 04期
关键词：
D O I：
10.1116/1.585021
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：1008 / 1013
页数：6
相关论文
共 50 条
  • [31] ELECTRONIC-PROPERTIES OF THE GAAS-ALGAAS INTERFACE WITH APPLICATIONS TO MULTI-INTERFACE HETEROJUNCTION SUPER-LATTICES
    DINGLE, R
    STORMER, HL
    GOSSARD, AC
    WIEGMANN, W
    SURFACE SCIENCE, 1980, 98 (1-3) : 90 - 100
  • [32] STRUCTURAL AND ELECTRONIC-PROPERTIES OF BULK GAAS, BULK ALAS, AND THE (GAAS)1(ALAS)1 SUPERLATTICE
    MIN, BI
    MASSIDDA, S
    FREEMAN, AJ
    PHYSICAL REVIEW B, 1988, 38 (03): : 1970 - 1977
  • [33] ELECTRONIC-PROPERTIES OF CLEAN AND OXYGEN EXPOSED GAAS (100) SURFACES
    SZUBER, J
    JOURNAL OF ELECTRON SPECTROSCOPY AND RELATED PHENOMENA, 1988, 46 (04) : 419 - 425
  • [34] ELECTRONIC-PROPERTIES OF DISLOCATIONS AND ASSOCIATED POINT-DEFECTS IN GAAS
    WOSINSKI, T
    FIGIELSKI, T
    INSTITUTE OF PHYSICS CONFERENCE SERIES, 1989, (104): : 151 - 162
  • [35] ELECTRONIC-PROPERTIES OF THE SBGA HETEROANTISITE DEFECT IN GAAS-SB
    OMLING, P
    YANG, BH
    SAMUELSON, L
    YAKIMOVA, R
    FORNELL, JO
    LEDEBO, L
    PHYSICAL REVIEW B, 1991, 44 (24): : 13398 - 13403
  • [36] ELECTRONIC-PROPERTIES OF SULFUR ADSORBED ON CLEAVED GAAS-SURFACES
    KOENDERS, L
    BLOMACHER, M
    MONCH, W
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1988, 6 (04): : 1416 - 1420
  • [37] ELECTRONIC-PROPERTIES OF DISLOCATIONS AND ASSOCIATED POINT-DEFECTS IN GAAS
    WOSINSKI, T
    FIGIELSKI, T
    STRUCTURE AND PROPERTIES OF DISLOCATIONS IN SEMICONDUCTORS 1989, 1989, 104 : 151 - 162
  • [38] Studies of electronic properties of GaS/GaAs interface
    Chen, Xiying
    Ding, Xunmin
    Zhang, Shengkun
    Zhang, Bo
    Lu, Fang
    Cao, Xian'an
    Zhu, Wei
    Hou, Xiaoyuan
    Wuli Xuebao/Acta Physica Sinica, 1997, 46 (03): : 612 - 617
  • [39] Electronic properties of the Fe/GaAs(001) interface
    Crisan, V
    Entel, P
    Rollmann, G
    JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2002, 240 (1-3) : 417 - 419
  • [40] ELECTRONIC-PROPERTIES OF SULFUR-TREATED GAAS(001) SURFACES
    REN, SF
    CHANG, YC
    PHYSICAL REVIEW B, 1990, 41 (11): : 7705 - 7712
12345