THE 2-PHOTON ABSORPTION SEMICONDUCTOR WAVE-GUIDE AUTOCORRELATOR

被引:74
|
作者
LAUGHTON, FR
MARSH, JH
BARROW, DA
PORTNOI, EL
机构
[1] UNIV GLASGOW, DEPT ELECTR & ELECT ENGN, GLASGOW G12 8QQ, SCOTLAND
[2] AF IOFFE PHYS TECH INST, ST PETERSBURG 194021, RUSSIA
关键词
17;
D O I
10.1109/3.286177
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we report a novel semiconductor waveguide autocorrelator that employs two-photon absorption (TPA), rather than the more commonly used-second-harmonic generation, as its nonlinear mechanism. An introduction to TPA is given, and the reasons for its use in the autocorrelator are explained with reference to nonlinear absorption experiments. We then describe the fabrication of the p-i-n GaAs/AlGaAs waveguide. The initial experiments carried out with a single beam in the waveguide are described and fitted to theory. Autocorrelation traces for both a CW modelocked Nd3+:YAG laser at 1.06 mum and a Q-switched InGaAsP/InP laser at 1.3 mum are presented and their pulsewidths obtained by means of a theoretical model. The sensitivity and resolution of the TPA waveguide autocorrelator are then discussed, as is a proposal for a multiple-contact TPA waveguide autocorrelator, designed so that the two pulse trains are counter-propagating. This would result in an autocorrelator from which the laser pulsewidth could be obtained in a single measurement, with no moving parts, and which could be integrated with a semiconductor laser.
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页码:838 / 845
页数:8
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