X-BAND AND KU-BAND AMPLIFIERS WITH GAAS SCHOTTKY-BARRIERS FIELD-EFFECT TRANSISTORS

被引：14

作者：

BAECHTOLD, W ^{[1
]}

机构：

[1] IBM CORP, ZURICH RES LAB, RUSCHLIKON, SWITZERLAND

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1973年 / SC 8卷 / 01期

关键词：

D O I：

10.1109/JSSC.1973.1050344

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：54 / 58

页数：5

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