FIELD-EFFECT TRANSISTOR MICROWAVE CHARACTERIZATION - NOISE-FIGURE, GAIN, POWER MEASUREMENTS ON MICROWAVE BENCH

被引：0
|
作者：
BINET, M
BAUDET, P
机构：
来源：
ACTA ELECTRONICA | 1980年 / 23卷 / 02期
关键词：
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：127 / 136
页数：10
相关论文
共 50 条
  • [31] Carbon nanotube field-effect transistor operation at microwave frequencies
    Pesetski, AA
    Baumgardner, JE
    Folk, E
    Przybysz, JX
    Adam, JD
    Zhang, H
    [J]. APPLIED PHYSICS LETTERS, 2006, 88 (11)
  • [32] NOISE-FIGURE OF CASCADED-NETWORKS AND THE ROLE OF AVAILABLE POWER GAIN
    BOZIC, SM
    [J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1979, 47 (02) : 201 - 202
  • [33] On the noise resistance of field-effect transistors at microwave frequencies
    Caddemi, A
    Donato, N
    [J]. FLUCTUATION AND NOISE LETTERS, 2001, 1 (03): : R151 - R161
  • [34] Microwave photonic links with gain and low noise figure
    Ackerman, Edward I.
    Cox, Charles H., III
    [J]. 2007 IEEE LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2007, : 38 - 39
  • [35] Low-Temperature Microwave Annealing for Tunnel Field-Effect Transistor
    Jhan, Yi-Ruei
    Wu, Yung-Chun
    Wang, Yu-Long
    Lee, Yao-Jen
    Hung, Min-Feng
    Lin, Hsin-Yi
    Chen, Yu-Hsiang
    Yeh, Mu-Shih
    [J]. IEEE ELECTRON DEVICE LETTERS, 2015, 36 (02) : 105 - 107
  • [36] THE NOISE FACTOR OF A FIELD-EFFECT TRANSISTOR POWER-AMPLIFIER
    ZAVRAZHNOV, YV
    [J]. TELECOMMUNICATIONS AND RADIO ENGINEERING, 1984, 38-9 (06) : 47 - 53
  • [37] A novel noise figure and gain test set for microwave devices
    Di Paola, A
    Sannino, M
    D'Amore, G
    [J]. WHERE INSTRUMENTATION IS GOING - CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 1998, : 657 - 660
  • [38] A novel noise figure and gain test set for microwave devices
    Di Paola, A
    Sannino, M
    [J]. IEEE TRANSACTIONS ON INSTRUMENTATION AND MEASUREMENT, 1999, 48 (05) : 921 - 926
  • [39] FIELD-EFFECT TRANSISTOR CHARACTERIZATION
    ROIZES, A
    DAVID, JP
    [J]. RECHERCHE AEROSPATIALE, 1990, (02): : 17 - 29
  • [40] SILICON-CARBIDE MICROWAVE FIELD-EFFECT TRANSISTOR - EFFECT OF FIELD-DEPENDENT MOBILITY
    TSAP, B
    [J]. SOLID-STATE ELECTRONICS, 1995, 38 (06) : 1215 - 1219
12345