共 50 条
- [31] Charge carrier lifetime modification in silicon by high energy H+ or He+ ion implantation NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 1997, 127 : 388 - 392
- [32] Investigations on H+ and He+ implantation effects in n-InP using Raman scattering PHYSICA B, 1999, 262 (3-4): : 329 - 335
- [33] Charge carrier lifetime modification in silicon by high energy H+, He+ ion implantation MATERIALS SCIENCE APPLICATIONS OF ION BEAM TECHNIQUES, 1997, 248-2 : 101 - 106
- [34] Investigations on H+ and He+ implantation effects in n-InP using Raman scattering Physica B: Condensed Matter, 1999, 262 (03): : 329 - 335
- [36] Nanovoid layer induced by He+ and H+ implantation and its gettering effect in SOI wafers 1998 5TH INTERNATIONAL CONFERENCE ON SOLID-STATE AND INTEGRATED CIRCUIT TECHNOLOGY PROCEEDINGS, 1998, : 757 - 760
- [37] Efficient production of silicon-on-insulator films by co-implantation of He+ with H+ 1997 IEEE INTERNATIONAL SOI CONFERENCE PROCEEDINGS, 1996, : 44 - 45
- [39] RELATIVE ABUNDANCE OF H+ AND HE+ IN OUTER IONOSPHERE IONOSPHERIC MODELS, 1994, 14 (12): : 139 - 141