GEOMETRICAL STRUCTURE OF AN IRON EPILAYER ON SI(111) - AN X-RAY STANDING WAVE ANALYSIS

被引：10

作者：

BOULLIARD, JC ^{[1
]}

CAPELLE, B ^{[1
]}

FERRET, D ^{[1
]}

LIFCHITZ, A ^{[1
]}

MALGRANGE, C ^{[1
]}

PETROFF, JF ^{[1
]}

TACCOEN, A ^{[1
]}

ZHENG, YL ^{[1
]}

机构：

[1] UNIV PARIS 07,F-75221 PARIS 05,FRANCE

来源：

JOURNAL DE PHYSIQUE I | 1992年 / 2卷 / 06期

关键词：

D O I：

10.1051/jp1:1992205

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The structure of an iron film, deposited at low temperature (50-degrees-C) upon a silicon (111) substrate, has been determined by means of X-ray Standing Wave experiments performed at LURE (Orsay, France). Experimental results are coherent with the model of an abrupt interface between the adsorbate and the surface: the first site of adsorption terminates the bulk silicon and a body-centred iron layer epitaxially grows on the substrate with a preferential growth orientation.

引用

页码：1215 / 1232

页数：18

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