AMORPHOUS-SIC THIN-FILM P-I-N LIGHT-EMITTING DIODE USING AMORPHOUS-SIN HOT-CARRIER TUNNELING INJECTION LAYERS

被引：39
|
作者：
PAASCHE, SM
TOYAMA, T
OKAMOTO, H
HAMAKAWA, Y
机构：
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
[2] OSAKA UNIV,FAC ENGN SCI,SEMICOND LAB,OSAKA,JAPAN
来源：
IEEE TRANSACTIONS ON ELECTRON DEVICES | 1989年 / 36卷 / 12期
关键词：
D O I：
10.1109/16.40952
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
引用
收藏
页码：2895 / 2902
页数：8
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