THE ROLE OF SURFACE CHARGING AND POTENTIAL REDISTRIBUTION ON THE KINETICS OF HOLE INJECTION REACTIONS AT N-GAAS

被引：25
|
作者：
NOTTEN, PHL
机构：
来源：
ELECTROCHIMICA ACTA | 1987年 / 32卷 / 04期
关键词：
D O I：
10.1016/0013-4686(87)87044-5
中图分类号：
O646 [电化学、电解、磁化学];
学科分类号：
081704 ;
摘要：
引用
收藏
页码：575 / 581
页数：7
相关论文
共 50 条
  • [11] Reduction of the potential energy barrier and resistance at wafer-bonded n-GaAs/n-GaAs interfaces by sulfur passivation
    Jackson, Michael J.
    Jackson, Biyun L.
    Goorsky, Mark S.
    JOURNAL OF APPLIED PHYSICS, 2011, 110 (10)
  • [12] ROLE OF PRESSURE IN STUDY OF INTERBAND SCATTERING IN N-GAAS
    SVIRIDOV, IF
    PRESNOV, VA
    SONNENBURG, K
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1975, 68 (02): : 633 - 638
  • [13] KINETICS OF ANODIC DARK AND PHOTODISSOLUTION OF N-GAAS AND N-GAP ELECTRODES
    LORENZ, W
    WOLF, B
    ELECTROCHIMICA ACTA, 1983, 28 (09) : 1255 - 1259
  • [14] Atomic force microscopy study of the potential distribution over a locally metallized n-GaAs surface
    Torkhov, N. A.
    Bozhkov, V. G.
    Ivonin, I. V.
    Novikov, V. A.
    JOURNAL OF SURFACE INVESTIGATION-X-RAY SYNCHROTRON AND NEUTRON TECHNIQUES, 2009, 3 (06) : 888 - 896
  • [15] The effect of adsorbed oxygen on the surface potential of n-GaAs(110) -: art. no. 064705
    Nevo, I
    Aloni, S
    Cohen, SR
    Hasse, G
    JOURNAL OF CHEMICAL PHYSICS, 2005, 123 (06):
  • [16] Atomic force microscopy study of the potential distribution over a locally metallized n-GaAs surface
    N. A. Torkhov
    V. G. Bozhkov
    I. V. Ivonin
    V. A. Novikov
    Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, 2009, 3 : 888 - 896
  • [17] Surface effect of n-GaAs cap on the THz emission in LT-GaAs
    Maria Herminia Balgos
    Rafael Jaculbia
    Elizabeth Ann Prieto
    Valynn Katrine Mag-usara
    Masahiko Tani
    Arnel Salvador
    Elmer Estacio
    Armando Somintac
    Journal of Materials Science: Materials in Electronics, 2018, 29 : 12436 - 12442
  • [18] Surface effect of n-GaAs cap on the THz emission in LT-GaAs
    Herminia Balgos, Maria
    Jaculbia, Rafael
    Ann Prieto, Elizabeth
    Mag-usara, Valynn Katrine
    Tani, Masahiko
    Salvador, Arnel
    Estacio, Elmer
    Somintac, Armando
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2018, 29 (14) : 12436 - 12442
  • [19] Quantum Well on the n-GaAs Surface Irradiated by Argon Ions
    V. M. Mikoushkin
    JETP Letters, 2018, 107 : 243 - 246
  • [20] Surface modification of n-GaAs by 50 MeV silicon ions
    Hullavarad, SS
    Railkar, TA
    Bhoraskar, SV
    Madukumar, P
    Gokama, AS
    Bhoraskar, VN
    Badrinarayanan, S
    Pawaskar, NR
    JOURNAL OF APPLIED PHYSICS, 1998, 83 (04) : 1962 - 1966
12345