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- [5] THE ROLE OF SURFACE-TREATMENT ON THE ANODIC-OXIDATION OF N-GAAS MICROELECTRONICS AND RELIABILITY, 1984, 24 (04): : 629 - 631
- [7] Fractal character of the distribution of surface potential irregularities in epitaxial n-GaAs (100) Semiconductors, 2009, 43 : 551 - 556
- [9] ELECTRON-EXCITATION AND CHEMICAL STEPS DURING ANODIC DECOMPOSITION OF N-GAAS ELECTRODES - A HOLE INJECTION STUDY BERICHTE DER BUNSEN-GESELLSCHAFT-PHYSICAL CHEMISTRY CHEMICAL PHYSICS, 1988, 92 (10): : 1068 - 1072
- [10] METAL PENETRATION AND DOPANT REDISTRIBUTION BENEATH ALLOYED OHMIC CONTACTS TO N-GAAS JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1987, 5 (04): : 1503 - 1507