THERMOELECTRIC-POWER IN PHOSPHORUS DOPED AMORPHOUS SILICON

被引：88
|
作者：
JONES, DI [1 ]
COMBER, PGL [1 ]
SPEAR, WE [1 ]
机构：
[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND
来源：
PHILOSOPHICAL MAGAZINE | 1977年 / 36卷 / 03期
关键词：
D O I：
10.1080/14786437708239738
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
引用
收藏
页码：541 / 551
页数：11
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