AN INVESTIGATION OF SURFACE STATES AT A SILICON SILICON OXIDE INTERFACE EMPLOYING METAL OXIDE SILICON DIODES

被引：1368

|

作者：

TERMAN, LM

机构：

来源：

SOLID-STATE ELECTRONICS | 1962年 / 5卷 / SEP-O期

关键词：

D O I：

10.1016/0038-1101(62)90111-9

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：285 / 299

页数：15

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