TRADEOFF BETWEEN 1/F NOISE AND MICROWAVE PERFORMANCE IN ALGAAS/GAAS HETEROJUNCTION BIPOLAR-TRANSISTORS

被引：18

作者：

COSTA, D ^{[1
]}

TUTT, MN ^{[1
]}

KHATIBZADEH, A ^{[1
]}

PAVLIDIS, D ^{[1
]}

机构：

[1] UNIV MICHIGAN,DEPT ELECT ENGN & COMP SCI,SOLID STATE ELECTR LAB,ANN ARBOR,MI 48109

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1994年 / 41卷 / 08期

关键词：

D O I：

10.1109/16.297728

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The 1/f noise characteristics and microwave gain of AlGaAs/GaAs heterojunction bipolar transistors (HBT's) have been investigated as a function of surface passivation ledge length. These measurements clearly demonstrate that the ledge length imposes a tradeoff between the 1/f noise and microwave power gain performance. Compared to a conventional unpassivated self-aligned HBT, HBT's with 0.4 and 1.1 mum ledge lengths improve the equivalent input base noise current spectral density at 100 Hz by as much as 2 dB and 6.5 dB, respectively; while degrading the maximum available gain at 18 GHz by 0.3 dB and 2.4 dB, respectively.

引用

页码：1347 / 1350

页数：4

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