RADIATION ANALYTICAL MATERIAL CHARACTERIZATION OF DIAMOND LAYERS DEPOSITED ONTO TUNGSTEN CARBIDE

被引：2

作者：

ULLRICH, HJ ^{[1
]}

SCHLAUBITZ, M ^{[1
]}

HAUBNER, R ^{[1
]}

LUX, B ^{[1
]}

机构：

[1] VIENNA UNIV TECHNOL,INST CHEM TECHNOL ANORGAN SUBST,A-1060 VIENNA,AUSTRIA

来源：

MIKROCHIMICA ACTA | 1992年 / 107卷 / 3-6期

关键词：

SCANNING ELECTRON MICROSCOPY; X-RAY DIFFRACTION; KOSSEL REFLECTION TECHNIQUE; EPITAXY;

D O I：

10.1007/BF01244479

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

The characterization of diamonds deposited onto WC single crystals by means of the CVD-method is reported. Investigations were performed by scanning electron microscopy, X-ray diffraction methods and the Kossel reflection technique. Single diamond crystals were deposited in the form of icosahedrons. An orientation correlation between substrate single crystal and diamond crystals could not be proved. In the paper presented, reasons will be given for this fact.

引用

页码：257 / 263

页数：7

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