QUANTITATIVE-ANALYSIS OF SURFACE CONTAMINATIONS ON SI WAFERS BY TOTAL REFLECTION X-RAY-FLUORESCENCE

被引：20
|
作者：
KONDO, H [1 ]
RYUTA, J [1 ]
MORITA, E [1 ]
YOSHIMI, T [1 ]
SHIMANUKI, Y [1 ]
机构：
[1] MITSUBISHI MAT SILICON CORP,NODA,CHIBA 278,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 1A-B期
关键词：
TOTAL REFLECTION; X-RAY FLUORESCENCE; SILICON; SURFACE CONTAMINATION;
D O I：
10.1143/JJAP.31.L11
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
A total reflection X-ray fluorescence (TRXRF) technique has been recently used to analyze metal contaminations on Si wafers. In this work, microdrop-contaminated Si wafers are used to make the calibration curves. Metal impurities in these wafers are shown to be condensed in a very small area near the center of the dropped area. To make the calibration curve, a relationship is derived between the intensity of the characteristic X-ray from metal impurities in the condensed area and that from the impurities uniformly distributed over the water surface. On the basis of this relationship, calibration curves for Fe, Ni, Cu and Zn are obtained.
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页码：L11 / L13
页数：3
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