INFLUENCE OF GROWTH-PARAMETERS AND CONDITIONS ON THE OVAL DEFECT DENSITY IN GAAS-LAYERS GROWN BY MBE

被引：12
|
作者：
KOPEV, PS
IVANOV, SV
YEGOROV, AY
UGLOV, DY
机构：
来源：
JOURNAL OF CRYSTAL GROWTH | 1989年 / 96卷 / 03期
关键词：
D O I：
10.1016/0022-0248(89)90048-1
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
引用
收藏
页码：533 / 540
页数：8
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