GAMMA-IRRADIATION EFFECT ON ELECTRONIC-PROPERTIES IN HYDROGENATED AMORPHOUS-SILICON

被引:3
|
作者
SHIRAFUJI, J
NAGATA, S
SHIRAKAWA, K
机构
来源
关键词
D O I
10.1002/pssa.2210980136
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
引用
收藏
页码:311 / 318
页数:8
相关论文
共 50 条
  • [21] MASS-SPECTROMETRIC STUDIES OF IMPURITIES IN SILANE AND THEIR EFFECTS ON THE ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON
    CORDERMAN, RR
    VANIER, PE
    JOURNAL OF APPLIED PHYSICS, 1983, 54 (07) : 3987 - 3992
  • [22] ELECTRONIC TRANSPORT IN HYDROGENATED AMORPHOUS-SILICON
    OVERHOF, H
    BEYER, W
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1983, 47 (04): : 377 - 392
  • [23] ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-GERMANIUM ALLOYS
    BULLOT, J
    GALIN, M
    GAUTHIER, M
    BOURDON, B
    BOURDON, B
    JOURNAL DE PHYSIQUE, 1983, 44 (06): : 713 - 721
  • [24] POSITION-DEPENDENT ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS-SILICON P-I-N-DIODES
    LAMPERT, MD
    KRUHLER, W
    SCHWARZ, R
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (04) : 2110 - 2114
  • [25] HYDROGENATED AMORPHOUS-SILICON FILMS DEPOSITED BY REACTIVE SPUTTERING - THE ELECTRONIC-PROPERTIES, HYDROGEN-BONDING AND MICROSTRUCTURE
    PINARBASI, M
    MALEY, N
    MYERS, A
    ABELSON, JR
    THIN SOLID FILMS, 1989, 171 (01) : 217 - 233
  • [26] THE EFFECTS OF APPLIED AND INTERNAL STRAIN ON THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SILICON
    SPEAR, WE
    HEINTZE, M
    PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1986, 54 (05): : 343 - 358
  • [27] PROPERTIES OF BONDED HYDROGEN IN HYDROGENATED AMORPHOUS-SILICON AND OTHER HYDROGENATED AMORPHOUS-SILICON ALLOYS
    LUCOVSKY, G
    JING, Z
    LU, Z
    LEE, DR
    WHITTEN, JL
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 1995, 182 (1-2) : 90 - 102
  • [28] INFLUENCE OF CORRELATION-EFFECTS ON THE ELECTRONIC-PROPERTIES OF AMORPHOUS-SILICON
    SCHWEITZER, L
    GRUNEWALD, M
    DERSCH, H
    JOURNAL DE PHYSIQUE, 1981, 42 (NC4): : 827 - 830
  • [29] CALCULATIONS OF THE ELECTRONIC STATES OF HYDROGENATED AMORPHOUS-SILICON
    TEMMERMAN, WM
    PAPACONSTANTOPOULOS, DA
    BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1980, 25 (03): : 260 - 261
  • [30] MICROSTRUCTURE AND ELECTRONIC-PROPERTIES OF HYDROGENATED AMORPHOUS SILICON-CARBON ALLOYS
    YACOBI, BG
    VONROEDERN, B
    MAHAN, AH
    JONES, KM
    PHYSICAL REVIEW B, 1985, 31 (12): : 8257 - 8258