STUDY OF CARBON SILICON INTERFACE IN POLYCRYSTALLINE SILICON BAND

被引：6
|
作者：
GOMA, J
OBERLIN, M
OBERLIN, A
机构：
来源：
REVUE DE PHYSIQUE APPLIQUEE | 1980年 / 15卷 / 02期
关键词：
D O I：
10.1051/rphysap:01980001502022900
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：229 / 232
页数：4
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