VERTICAL SCALING IN HETEROJUNCTION BIPOLAR-TRANSISTORS WITH NONEQUILIBRIUM BASE TRANSPORT

被引：28

作者：

LEVI, AFJ ^{[1
]}

JALALI, B ^{[1
]}

NOTTENBURG, RN ^{[1
]}

CHO, AY ^{[1
]}

机构：

[1] UNIV SO CALIF,LOS ANGELES,CA 90089

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 04期

关键词：

D O I：

10.1063/1.106634

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We experimentally measure a departure from conventional scaling of current gain-beta with base thickness x(B) in abrupt junction n-p-n heterojunction bipolar transistors. It is empirically established that extreme nonequilibrium electron transport in the base causes beta to vary as approximately 1/x(B). In our AlInAs/InGaAs transistors this new behavior occurs for base thickness x(B) less-than-or-similar-to 1000 angstrom.

引用

页码：460 / 462

页数：3

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