ULTRAFAST REVERSIBLE PHASE-CHANGE IN GESB FILMS FOR ERASABLE OPTICAL STORAGE

被引：85

作者：

AFONSO, CN ^{[1
]}

SOLIS, J ^{[1
]}

CATALINA, F ^{[1
]}

KALPOUZOS, C ^{[1
]}

机构：

[1] INST ELECTR STRUCT & LASERS,FORTH,GR-7110 IRAKLION,GREECE

来源：

APPLIED PHYSICS LETTERS | 1992年 / 60卷 / 25期

关键词：

D O I：

10.1063/1.106772

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Amorphous-to-crystalline and crystalline-to-amorphous transformations are triggered in GeSb thin films by irradiation with femtosecond and picosecond laser pulses. Phase changes are accompanied with optical contrast and therefore the feasibility of phase-change optical recording at ultrafast rates is demonstrated for the first time. The phase reversal by ultrashort pulses seems to be related to the dependence of the degree of undercooling prior to solidification on the irradiation energy density.

引用

页码：3123 / 3125

页数：3

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