PYRITE FILM FORMATION BY H2S REACTIVE ANNEALING OF IRON

被引：20
|
作者：
PIMENTA, G [1 ]
KAUTEK, W [1 ]
机构：
[1] BUNDESANSTALT MAT FORSCH & PRUFUNG,LASER & CHEM THIN FILM TECHNOL LAB,D-12205 BERLIN,GERMANY
来源：
THIN SOLID FILMS | 1994年 / 238卷 / 02期
关键词：
D O I：
10.1016/0040-6090(94)90058-2
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Pyrite (FeS2) thin films have been prepared by direct H2S gas chalcogenization of electrodeposited iron thin films at temperatures ranging from 300 to 500 degrees C. Polycrystalline films with grain sizes of up to 0.9 mu m were achieved. A reaction model is developed. It suggests that the surface coverage of adsorbed atomic sulphur determines the mechanism.
引用
收藏
页码：213 / 217
页数：5
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