VERY HIGH-PURITY INP EPILAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION

被引：45

作者：

RAZEGHI, M ^{[1
]}

MAUREL, P ^{[1
]}

DEFOUR, M ^{[1
]}

OMNES, F ^{[1
]}

NEU, G ^{[1
]}

KOZACKI, A ^{[1
]}

机构：

[1] CNRS,F-06565 VALBONNE,FRANCE

来源：

APPLIED PHYSICS LETTERS | 1988年 / 52卷 / 02期

关键词：

D O I：

10.1063/1.99068

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：117 / 119

页数：3

共 50 条

[1] IDENTIFICATION OF ACCEPTORS AND DONORS IN HIGH-PURITY INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
UWAI, K
YAMADA, S
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[J]. JOURNAL OF APPLIED PHYSICS, 1987, 61 (03) : 1059 - 1062
[2] HIGH-PURITY INP LAYER GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION USING TERTIARYBUTYLPHOSPHINE
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USHIKUBO, K
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[J]. APPLIED PHYSICS LETTERS, 1991, 59 (22) : 2862 - 2864
[3] RESIDUAL ACCEPTOR IMPURITIES IN UNDOPED HIGH-PURITY INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
BOSE, SS
SZAFRANEK, I
KIM, MH
STILLMAN, GE
[J]. APPLIED PHYSICS LETTERS, 1990, 56 (08) : 752 - 754
[4] AN ELECTRON TRAP RELATED TO PHOSPHORUS DEFICIENCY IN HIGH-PURITY INP GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (08) : 3072 - 3075
[5] DEFECTS IN HIGH-PURITY GAAS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 1991, 6 (03) : 229 - 230
[6] HIGH-PURITY ZNSE OBTAINED BY METALORGANIC CHEMICAL VAPOR-DEPOSITION EPITAXY
BLANCONNIER, P
HOGREL, JF
JEANLOUIS, AM
SERMAGE, B
[J]. JOURNAL OF APPLIED PHYSICS, 1981, 52 (11) : 6895 - 6900
[7] METALORGANIC CHEMICAL VAPOR-DEPOSITION OF HIGH-PURITY GAAS USING TERTIARYBUTYLARSINE
HAACKE, G
WATKINS, SP
BURKHARD, H
[J]. APPLIED PHYSICS LETTERS, 1989, 54 (20) : 2029 - 2031
[8] CHARACTERIZATION OF VERY HIGH-PURITY INP GROWN BY LOW-PRESSURE METAL-ORGANIC CHEMICAL VAPOR-DEPOSITION
BOSE, SS
KIM, MH
LEE, B
STILLMAN, GE
THRUSH, EJ
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[J]. JOURNAL OF ELECTRONIC MATERIALS, 1988, 17 (04) : S36 - S37
[9] HIGH-PURITY GAAS-LAYERS GROWN BY LOW-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION
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OMNES, F
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ACHER, O
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[J]. APPLIED PHYSICS LETTERS, 1989, 55 (16) : 1677 - 1679
[10] INGAAS/INP PHOTODIODES GROWN BY METALORGANIC CHEMICAL VAPOR-DEPOSITION
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[J]. JOURNAL OF CRYSTAL GROWTH, 1986, 77 (1-3) : 598 - 605

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