TIGHT-BINDING ANALYSIS OF THE CONDUCTION-BAND STRUCTURE IN QUANTUM WIRES

被引：15
|
作者：
YAMAUCHI, T [1 ]
ARAKAWA, Y [1 ]
SCHULMAN, JN [1 ]
机构：
[1] HUGHES RES LABS,MALIBU,CA 90265
来源：
APPLIED PHYSICS LETTERS | 1990年 / 57卷 / 12期
关键词：
D O I：
10.1063/1.103491
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The tight-binding method is applied, for the first time, to the analysis of the conduction-band structure of GaAs-Al0.4Ga0.6As quantum wires which are parallel to the [110] orientation. The results indicate that the effective mass of electrons parallel to the quantum wires is about 1.45 times as large as that of bulk GaAs. This increased effective mass reduces the electron mobility of the quantum wire at low temperature compared to the value which has been expected.
引用
收藏
页码：1224 / 1226
页数：3
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