共 50 条
- [41] SURFACE-DIFFUSION IMPURITY PROFILES IN SEMICONDUCTORS .1. FORMULATION OF THE PROBLEM - CONSECUTIVE DIFFUSION [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1983, 17 (11): : 1273 - 1277
- [42] INFLUENCE OF RADIATION DEFECTS ON IMPURITY DIFFUSION IN SILICON [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1977, 11 (10): : 1096 - 1097
- [43] Influence of external field on diffusion of impurity in bicrystal [J]. IZVESTIYA AKADEMII NAUK SERIYA FIZICHESKAYA, 1995, 59 (10): : 77 - 82
- [44] INFLUENCE OF IMPURITY HOLES ON THE PERMITTIVITY OF ZERO-GAP SEMICONDUCTORS [J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (05): : 563 - 565
- [45] DELOCALIZATION OF H - -LIKE IMPURITY STATES AND FORMATION OF BAND TYPE IMPURITY CONDUCTIVITY IN SEMICONDUCTORS. [J]. Physica B: Physics of Condensed Matter & C: Atomic, Molecular and Plasma Physics, Optics, 1982, 117-118 (Pt I): : 257 - 259
- [47] Influence of Electric Current on Diffusion of Impurity in a Bicrystal [J]. Bulletin of the Russian Academy of Sciences. Physics, 1995, 59 (10):
- [48] Study on the influence of impurity on the formation process [J]. Dianchi/Battery, 2003, 33 (03):
- [49] DELOCALIZATION OF H- -LIKE IMPURITY STATES AND FORMATION OF BAND TYPE IMPURITY CONDUCTIVITY IN SEMICONDUCTORS [J]. PHYSICA B & C, 1983, 117 (MAR): : 257 - 259
- [50] Influence of Impurity Atoms on Hydrogen Diffusion into Ruthenium [J]. JOURNAL OF PHYSICAL CHEMISTRY C, 2022, 126 (46): : 19895 - 19903