EMPIRICAL P-N INTERACTIONS - GLOBAL TRENDS, CONFIGURATION SENSITIVITY AND N=Z ENHANCEMENTS

被引:124
|
作者
BRENNER, DS
WESSELBORG, C
CASTEN, RF
WARNER, DD
ZHANG, JY
机构
[1] BROOKHAVEN NATL LAB,UPTON,NY 11973
[2] UNIV GIESSEN,W-6300 GIESSEN,GERMANY
[3] CHINA CTR ADV SCI & TECHNOL,WORLD LAB,CTR THEORET PHYS,BEIJING,PEOPLES R CHINA
[4] INST MODERN PHYS,LANZHOU,PEOPLES R CHINA
关键词
D O I
10.1016/0370-2693(90)90945-3
中图分类号
P1 [天文学];
学科分类号
0704 ;
摘要
Empirical proton-neutron (p-n) interaction strengths are extracted for all nuclei with well-known binding energies. Particularly large interaction strengths are noted for N=Z nuclei: they result primarily from the T=0 component of the interaction and are discussed in terms of both schematic and realistic shell model calculations. Also, the observed micro-structure of the p-n interaction in doubly magic and deformed regions sheds light on both the orbit sensitivity and on the role of monopole and quadrupole components of the p-n interaction. © 1990.
引用
收藏
页码:1 / 6
页数:6
相关论文
共 50 条
  • [41] RADIATIVE RECOMBINATION EFFICIENCIES IN GA(AS,P)-N AND (IN,GA)P-N
    KLEIMAN, GG
    JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 180 - 189
  • [42] The critical groups for K-m boolean OR P-n and P-m boolean OR P-n
    Set, Wei-Na
    Pant, Yong-Liang
    Wang, Jian
    AUSTRALASIAN JOURNAL OF COMBINATORICS, 2011, 50 : 113 - 125
  • [43] Efficiency Calculations for Some p-n and n-p Heterojunctions
    Sreedhar, A. K.
    Sharma, B. L.
    Purohit, K.
    PHYSICA STATUS SOLIDI A-APPLICATIONS AND MATERIALS SCIENCE, 1970, 3 (03): : K217 - K221
  • [44] Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound
    A. Sh. Davletova
    S. Zh. Karazhanov
    Inorganic Materials, 2009, 45 : 1213 - 1216
  • [45] Improving Sensitivity of p-n Junction Temperature Sensor by Carrier Lifetime Modification
    Poyai, A.
    Ratanaudomphisut, E.
    Supadech, J.
    Klunngien, N.
    Hruanan, C.
    Sophitpan, S.
    SMART MATERIALS, 2008, 55-57 : 517 - 520
  • [46] Sensitivity of dislocation engineered Si p-n junctions to influence of illumination and ultrasound
    Davletova, A. Sh.
    Karazhanov, S. Zh.
    INORGANIC MATERIALS, 2009, 45 (11) : 1213 - 1216
  • [47] HOOGE PARAMETERS OF n + -p-n AND p + -n-p SILICON BIPOLAR TRANSISTORS.
    Zhu, Xichen
    van der Ziel, Aldert
    IEEE Transactions on Electron Devices, 1985, ED-32 (03) : 658 - 661
  • [48] Physical limitation of p-n junction - statistical variations of p-n junction depth in MOSFET array
    Mizuno, T
    SOLID-STATE ELECTRONICS, 2003, 47 (06) : 957 - 962
  • [49] EFFECT OF p-n COUPLING ON THE OPEN CIRCUIT VOLTAGE DECAY IN A p-n JUNCTION DEVICE.
    Madan, M.K.
    Tewary, V.K.
    Indian Journal of Pure and Applied Physics, 1985, 23 (04): : 212 - 216
  • [50] Thickness dependence of electron-electron interactions in topological p-n junctions
    Backes, Dirk
    Huang, Danhong
    Mansell, Rhodri
    Lanius, Martin
    Kampmeier, Jorn
    Ritchie, David
    Mussler, Gregor
    Gumbs, Godfrey
    Gruetzmacher, Detlev
    Narayan, Vijay
    PHYSICAL REVIEW B, 2019, 99 (12)