ANNEALING OF DEFECTS IN IRRADIATED NIOBIUM

被引：5
|
作者：
ALEKSEEVA, OK
BYKOV, VN
LEVDIK, VA
MIRON, NF
SHANTAROVICH, VP
机构：
来源：
PHYSICA SCRIPTA | 1979年 / 20卷 / 5-6期
关键词：
D O I：
10.1088/0031-8949/20/5-6/026
中图分类号：
O4 [物理学];
学科分类号：
0702 ;
摘要：
引用
收藏
页码：683 / 684
页数：2
相关论文
共 50 条
  • [41] INFLUENCE OF ANNEALING OF RADIATION DEFECTS ON ABSORPTION SPECTRUM OF GALLIUM ARSENIDE IRRADIATED WITH FAST NEUTRONS
    BARAMIDZE, NV
    KURDIANI, NI
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 5 (04): : 555 - +
  • [42] ANNEALING BEHAVIOR OF DEFECTS IN ELECTRON-IRRADIATED p-TYPE CdTe.
    Taguchi, Tsunemasa
    Shirafuji, Junji
    Inuishi, Yoshio
    1600, (13):
  • [43] Effects of annealing on the luminescent properties from defects formed in electron-irradiated GaN
    Liang, L. M.
    Xie, X. J.
    Hao, Q. Y.
    Tian, Y.
    Liu, C. C.
    RADIATION MEASUREMENTS, 2012, 47 (10) : 965 - 969
  • [44] Investigation of the thermal annealing effect on the defects structure in γ-irradiated CdZnTe crystals by photoluminescence method
    Nasieka, Iu.
    Rashkovetskyi, L.
    Strilchuk, O.
    Maslov, V.
    Venger, E.
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2012, 290 : 26 - 29
  • [45] The evolution of micro defects in He+ irradiated FeCrNi alloy during isochronal annealing
    Lu, Eryang
    Cao, Xingzhong
    Jin, Shuoxue
    Zhang, Chunxiong
    Zhang, Peng
    Guo, Liping
    Zhu, Te
    Gong, Yihao
    Wang, Baoyi
    NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS, 2015, 356 : 94 - 98
  • [46] Effect of enhanced pressure during annealing on the creation of defects in electron-irradiated silicon
    Misiuk, A
    Surma, B
    Bak-Misiuk, J
    Antonova, IV
    Smagulova, SA
    VACUUM, 2005, 77 (04) : 513 - 517
  • [47] Annealing behavior of deep-level defects in 1 MeV electron irradiated GaAs
    1600, (75):
  • [48] ANNEALING BEHAVIOR OF DEEP-LEVEL DEFECTS IN 1 MEV ELECTRON-IRRADIATED GAAS
    LAI, ST
    NENER, BD
    JOURNAL OF APPLIED PHYSICS, 1994, 75 (05) : 2354 - 2357
  • [49] GENERATION AND ANNEALING OF RADIATIONAL DEFECTS IN NEUTRON-IRRADIATED AL2O3
    ABDUKADYROVA, IK
    SOVIET ATOMIC ENERGY, 1987, 62 (03): : 221 - 225
  • [50] Optical studies of infrared active defects in irradiated Si after annealing at 450 degrees C
    Shi, Y
    Suezawa, M
    Wu, FM
    Imai, M
    Zheng, YD
    Sumino, K
    ICDS-18 - PROCEEDINGS OF THE 18TH INTERNATIONAL CONFERENCE ON DEFECTS IN SEMICONDUCTORS, PTS 1-4, 1995, 196- : 157 - 161
12345