MASKLESS FABRICATION OF CONTACT VIAS BY FOCUSED MEV HEAVY-ION BEAM

被引：0
|
作者：
MOKUNO, Y
HORINO, Y
KINOMURA, A
CHAYAHARA, A
KIUCHI, M
TAMURA, S
FUJII, K
TAKAI, M
机构：
[1] OSAKA UNIV,FAC ENGN SCI,TOYONAKA,OSAKA 560,JAPAN
[2] OSAKA UNIV,EXTREME MAT RES CTR,TOYONAKA,OSAKA 560,JAPAN
来源：
NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1993年 / 80-1卷
关键词：
D O I：
10.1016/0168-583X(93)90784-4
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
A focused MeV nickel ion beam was used for making contact vias in a multilayer structure through a passivation layer. The structures had two aluminum layers isolated by a Si3N4 insulating layer. The distribution of implanted nickel ions was controlled by changing the implantation energy. After the implantation, current-voltage characteristics between the two aluminum layers were measured by a two-point probe method. When the distribution of nickel was adjusted at the Si3N4 insulating layer, electrical conduction was observed at the nickel fluence of 1 x 10(17)-2 x 10(18) ions/cm2, and it was found that the conductivity was increased and the breakdown voltage was decreased as the fluence of nickel ions increased.
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收藏
页码：1292 / 1295
页数：4
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