共 50 条
- [1] INFLUENCE OF THE CHARGE STATE OF PRIMARY DEFECTS ON THE FORMATION OF COMPLEXES IN n-TYPE SILICON.Soviet physics. Semiconductors, 1980, 14 (02): : 189 - 191Gubskaya, V.I.Kuchinskii, P.V.Lomako, V.M.
- [2] ORIENTATION DEPENDENCE OF THE FORMATION OF RADIATION DEFECTS IN N-TYPE SILICONSOVIET PHYSICS-SOLID STATE, 1964, 6 (01): : 266 - 267KRYUKOVA, IVVAVILOV, VS
- [3] INFLUENCE OF IRRADIATION TEMPERATURE AND OF NATURE OF DOPANT ON FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICONSOVIET PHYSICS SEMICONDUCTORS-USSR, 1974, 8 (03): : 303 - 305VAVILOV, VSGLAZMAN, VBISAEV, NUMUKASHEV, BNSPITSYN, AV
- [4] ON THE QUENCHED-IN DEFECTS IN N-TYPE SILICONPHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (01): : 239 - 244BALASUBRAMANYAM, NKUMAR, V
- [5] FORMATION OF RADIATION DEFECTS IN N-TYPE SILICON BY IRRADIATION WITH 1.2 GEV ELECTRONSSOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (08): : 969 - 970KASILOV, VILUGAKOV, PFMASLOV, NIFILIPPOV, IM
- [6] FORMATION AND PROPERTIES OF DEFECTS IN N-TYPE SILICON AFTER IRRADIATION FOLLOWED BY ANNEALINGSEMICONDUCTORS, 1994, 28 (11) : 1062 - 1066KUCHINSKII, PVLOMAKO, VMSHAKHLEVICH, LN
- [7] INFLUENCE OF TEMPERATURE DURING 640-MEV PROTON IRRADIATION ON FORMATION OF RADIATION DEFECTS IN N-TYPE SILICONSOVIET PHYSICS SEMICONDUCTORS-USSR, 1980, 14 (10): : 1146 - 1148KUZNETSOV, VILUGAKOV, PF
- [8] INFLUENCE OF THE IRRADIATION TEMPERATURE AND OF THE NATURE OF DOPANT ON THE FORMATION OF DEFECTS IN N-TYPE ELECTRON-IRRADIATED SILICON.Soviet Physics, Semiconductors (English translation of Fizika i Tekhnika Poluprovodnikov), 1974, 8 (03): : 303 - 305Vavilov, V.S.Glaxman, V.B.Isaev, N.U.Mukashev, B.N.Spitsyn, A.V.
- [9] Formation and passivation kinetics of gold-hydrogen complexes in n-type siliconJOURNAL OF APPLIED PHYSICS, 2003, 93 (01) : 753 - 755Zamouche, A
- [10] Formation of shallow-acceptor defects in Li-irradiated N-type siliconAPPLIED PHYSICS EXPRESS, 2025, 18 (01)Kiyoi, AkiraKawabata, Naoyuki