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- [21] INFLUENCE OF THE RATE OF IRRADIATION WITH FAST-NEUTRONS ON THE DEFECT FORMATION PROCESSES IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 430 - 432
- [22] APPEARANCE OF RADIATION DEFECTS IN GERMANIUM DUE TO BOMBARDMENT WITH 50 KEV ELECTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 923 - 924
- [24] HIGH-TEMPERATURE ANNEALING OF DEFECTS PRODUCED BY FAST NEUTRONS IN GERMANIUM SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (11): : 2610 - +
- [25] CHANGES IN ENERGY-LEVEL STRUCTURE OF LITHIUM-DOPED GERMANIUM DUE TO IRRADIATION WITH 1019 GAMMA-RAYS-CM2 AND ANNEALING SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 148 - 149
- [26] ORIENTATIONAL EFFECTS DUE TO TRAVELING OF FAST-NEUTRONS AND HARD GAMMA-QUANTA THROUGH CRYSTALS PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 157 (01): : 129 - 136
- [27] CHANGE IN THE CRYSTAL-LATTICE PERIOD OF GALLIUM-ARSENIDE DUE TO IRRADIATION WITH FAST-NEUTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 850 - 851
- [28] ACTIVATED CONDUCTION IN DOPED GERMANIUM COMPENSATED BY IRRADIATION WITH FAST REACTOR NEUTRONS. 1982, V 16 (N 4): : 433 - 435
- [29] ACTIVATED CONDUCTION IN DOPED GERMANIUM COMPENSATED BY IRRADIATION WITH FAST-REACTOR NEUTRONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (04): : 433 - 435