FORMATION OF DEFECTS IN LITHIUM-DOPED GERMANIUM DUE TO BOMBARDMENT WITH FAST-NEUTRONS

被引:0
|
作者
KONOPLEV.RF [1 ]
NOVIKOV, SR [1 ]
机构
[1] BP KONSTANTINOV NUCL PHYS INST, LENINGRAD, USSR
来源
SOVIET PHYSICS SEMICONDUCTORS-USSR | 1974年 / 7卷 / 07期
关键词
D O I
暂无
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
下载
收藏
页码:906 / 908
页数:3
相关论文
共 50 条
  • [21] INFLUENCE OF THE RATE OF IRRADIATION WITH FAST-NEUTRONS ON THE DEFECT FORMATION PROCESSES IN SILICON
    AESHIN, AI
    ANTONOVA, IV
    VASILEV, AV
    PANOV, VI
    SHAIMEEV, SS
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1988, 22 (04): : 430 - 432
  • [22] APPEARANCE OF RADIATION DEFECTS IN GERMANIUM DUE TO BOMBARDMENT WITH 50 KEV ELECTRONS
    VAVILOV, VS
    OK, AM
    CHUKICHEV, MV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1981, 15 (08): : 923 - 924
  • [23] Defects induced by irradiation with fast neutrons in n-type germanium
    Kovacevic, I.
    Pivac, B.
    Jacimovic, R.
    Khan, M. K.
    Markevich, V. P.
    Peaker, A. R.
    MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING, 2006, 9 (4-5) : 606 - 612
  • [24] HIGH-TEMPERATURE ANNEALING OF DEFECTS PRODUCED BY FAST NEUTRONS IN GERMANIUM
    KONOPLEV.RF
    NOVIKOV, SR
    RYVKIN, SM
    SOVIET PHYSICS SOLID STATE,USSR, 1965, 6 (11): : 2610 - +
  • [25] CHANGES IN ENERGY-LEVEL STRUCTURE OF LITHIUM-DOPED GERMANIUM DUE TO IRRADIATION WITH 1019 GAMMA-RAYS-CM2 AND ANNEALING
    SINISHCHUK, PK
    ABIEV, AK
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1973, 7 (01): : 148 - 149
  • [26] ORIENTATIONAL EFFECTS DUE TO TRAVELING OF FAST-NEUTRONS AND HARD GAMMA-QUANTA THROUGH CRYSTALS
    BARYSHEVSKII, VG
    ZAITSEVA, AM
    PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1990, 157 (01): : 129 - 136
  • [27] CHANGE IN THE CRYSTAL-LATTICE PERIOD OF GALLIUM-ARSENIDE DUE TO IRRADIATION WITH FAST-NEUTRONS
    KORSHUNOV, FP
    KURILOVICH, NF
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1978, 12 (07): : 850 - 851
  • [28] ACTIVATED CONDUCTION IN DOPED GERMANIUM COMPENSATED BY IRRADIATION WITH FAST REACTOR NEUTRONS.
    KONOPLEVA, R.F.
    NAZARKIN, I.V.
    1982, V 16 (N 4): : 433 - 435
  • [29] ACTIVATED CONDUCTION IN DOPED GERMANIUM COMPENSATED BY IRRADIATION WITH FAST-REACTOR NEUTRONS
    KONOPLEVA, RF
    NAZARKIN, IV
    SOVIET PHYSICS SEMICONDUCTORS-USSR, 1982, 16 (04): : 433 - 435
  • [30] Synthesis microwave-assisted: fast method to obtain lithium-doped sodium titanate
    Melo, A. D.
    da Silva, J. P.
    Nobre, F. X.
    Costa, S.
    Sales Jr, J. C. C.
    Anglada-Rivera, J.
    Guerrero, F.
    da Paula, M. M. S.
    de Souza, R. F. B.
    Pena-Garcia, R.
    Aguilera, L.
    Leyet, Y.
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2023, 34 (06)