IMPROVED MODEL FOR COMPUTING HOLE MOBILITY AN IN P-TYPE SILICON

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作者：

LINARES, LC

LI, SS

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BULLETIN OF THE AMERICAN PHYSICAL SOCIETY | 1979年 / 24卷 / 03期

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O4 [物理学];

学科分类号：

0702 ;

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页码：317 / 317

页数：1

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