AN IMPROVED MODEL FOR ANALYZING HOLE MOBILITY AND RESISTIVITY IN P-TYPE SILICON DOPED WITH BORON, GALLIUM, AND INDIUM

被引：28

作者：

LINARES, LC ^{[1
]}

LI, SS ^{[1
]}

机构：

[1] UNIV FLORIDA,DEPT ELECT ENGN,GAINESVILLE,FL 32611

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1981年 / 128卷 / 03期

关键词：

D O I：

10.1149/1.2127466

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：601 / 608

页数：8

共 50 条

[1] AN IMPROVED MODEL FOR ANALYZING HOLE MOBILITY AND RESISTIVITY IN P-TYPE SILICON DOPED WITH BORON, GALLIUM, AND INDIUM
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LANG, JE
SZMULOWICZ, F
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (12) : 2692 - 2693
[2] AN IMPROVED MODEL FOR ANALYZING HOLE MOBILITY AND RESISTIVITY IN P-TYPE SILICON DOPED WITH BORON, GALLIUM, AND INDIUM - REPLY
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (12) : 2693 - 2694
[3] IMPROVED MODEL FOR ANALYZING HOLE MOBILITY AND RESISTIVITY IN BORON-, GALLIUM-DOPED, AND INDIUM-DOPED SILICON
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[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1979, 126 (08) : C366 - C367
[4] IMPROVED MODEL FOR COMPUTING HOLE MOBILITY AN IN P-TYPE SILICON
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[J]. BULLETIN OF THE AMERICAN PHYSICAL SOCIETY, 1979, 24 (03): : 317 - 317
[5] TEMPERATURE-DEPENDENCE OF RESISTIVITY AND HOLE CONDUCTIVITY MOBILITY IN P-TYPE SILICON
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[J]. SOLID-STATE ELECTRONICS, 1976, 19 (11) : 949 - 953
[6] PHOTOSENSITIVITY OF SILICON DOPED WITH BORON, GALLIUM, OR INDIUM
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[J]. SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (04): : 624 - +
[7] CARRIER CONCENTRATION AND HOLE MOBILITY IN P-TYPE GALLIUM PHOSPHIDE
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[J]. ZEITSCHRIFT FUR NATURFORSCHUNG PART A-ASTROPHYSIK PHYSIK UND PHYSIKALISCHE CHEMIE, 1960, 15 (03): : 267 - 268
[8] HOLE MOBILITY IN P-TYPE SILICON ACCUMULATION LAYERS
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[J]. JOURNAL OF APPLIED PHYSICS, 1989, 65 (06) : 2361 - 2370
[9] Comparison of boron- and gallium-doped p-type Czochralski silicon for photovoltaic application
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[10] DOPANT DENSITY AND TEMPERATURE-DEPENDENCE OF HOLE MOBILITY AND RESISTIVITY IN BORON DOPED SILICON
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